PART |
Description |
Maker |
PA28F004S3-120 PA28F004S3-150 PA28F008S3-120 PA28F |
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
|
INTEL[Intel Corporation]
|
DD28F032SA DD28F032SA-080 DD28F032SA-070 DD28F032S |
32-MBIT (2 MBIT X 16/ 4 MBIT X 8) FlashFile MEMORY 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFileMEMORY 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY 4M X 8 FLASH 12V PROM, 100 ns, PDSO56
|
Intel Corporation Intel Corp. PROM Intel, Corp.
|
M5M29KE131BVP |
Memory>NOR type Flash Memory 134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY Stacked-uMCP (micro Multi Chip Package)
|
Renesas Electronics Corporation
|
HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 262, 144-Word x 16-Bit Dynamic Random Access Memory x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor] ITT, Corp.
|
M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
28F008SA-L 29043505 |
8-Mbit (1-Mbit x 8) FlashFile Memory From old datasheet system
|
Intel
|
HB561008AR-20 HB561008A-20 HB561008B-12 HB561008B- |
x8 Fast Page Mode DRAM Module 262114-word x 8 bit dynamic random access memory module 26214-word x 8-bit dynamic random access memory module 262锛?14-word x 8-bit dynamic random access memory module
|
Hitachi,Ltd.
|
HM530281 HM530281TT HM530281TT-20 HM530281TT-25 HM |
331776 WORD X 8 BIT FRAME MEMORY 331,776 WORD X 8 BIT FRAME MEMORY
|
HITACHI[Hitachi Semiconductor]
|
M6MGD13TW66CWG-P |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM 134217728位(8388608字由16位)的CMOS闪存 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas Electronics, Corp. Renesas Electronics Corporation
|
TC54256 TC54256AF TC54256AP |
32,768 WORD x 8 BIT CMOS ONE TIME PROGRAMMABLE READ ONLY MEMORY 32768 word x 8-bit CMOC one time programmable read only memory, 200ns
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
M5M29KE131BTP |
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY
|
Renesas Electronics Corporation.
|
M6MGB_T160S2BVP M6MGB E99003_A |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY 16,777,216-BIT (1,048,576 -WORD BY 16-BIT 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY From old datasheet system
|
Mitsubishi
|